Co-γFe2O3/NiO Thin Film Disks fabricated by Plasma Oxidization

Submicron organic thin-film transistors fabricated by film profile engineering method

Thin-film Single-walled Carbon Nanotube Transistors Fabricated Using Mechanical Meniscus Aligned Arrays by Vineet Nazareth

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

RBS Characteristic of Cd1−xZnxS Thin Film Fabricated by Vacuum Deposition Method

Cd1−xZnxS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford backscattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; th...

Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

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